IRFR024NTRPBF INFINEON/英飞凌 功率场效应管, MOSFET, N通道, 55 V, 17 A, 0.075 ohm, TO-252A

The IRFR024NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.